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1.Hossain M Z, Walsh M A, Hersam M C.: Scanning tunneling microscopy, spectroscopy, and nanolithography of epitaxial graphene chemically modified with aryl moieties. J. Am. Chem. Soc. 132: 15399-15403, 2010.


2.Hossain M Z, Kato H S, and Kawai M.: Valence states of one-dimensional molecular assembly formed by ketone molecules on the Si(100)-(2 × 1)-H surface. J. Phys. Chem. C 113: 10751-10754, 2009.


3.Hossain M Z, Kato H S, and Kawai M.: Self-directed chain reaction by small ketones with the dangling bond site on the Si(100)-(2 × 1)-H surface: Acetophenone, a unique example. J. Am. Chem. Soc., 130: 11518-11523, 2008.


4.Hossain M Z, Kato H S, and Kawai M.:Selective Chain Reaction of Acetone Leading to the Successive Growth of Mutually Perpendicular Molecular Lines of the Si(100)-(2 × 1)-H Surface. J. Am. Chem. Soc., 129: 12304-12309, 2007.


5.Hossain M Z, Kato H S, and Kawai M.: Competing Forward and Reversed Chain Reactions in 1D Molecular Line Growth on the Si(100)–(2 × 1)–H Surface. J. Am. Chem. Soc. 129: 3328-3332, 2007.


6.Hossain M Z, Kato H S, and Kawai M.: HREELS, STM, and LEED studies of the Si(100)–c(4 × 4) surface at 100 and 300 K: Formation of Si-C surface dimmers. Phys. Rev. B, 73: 235347, 2006.


7.Hossain M Z, Kato H S, and Kawai M.: Fabrication of interconnected 1D molecular lines along and across the dimer rows on the Si(100)-(2 × 1)-H surface through the radical chain reaction. J. Phys. Chem. B, 109: 23129-23133, 2005.


8.Hossain M Z, Kato H S, and Kawai M.: Controlled Fabrication of 1D Molecular Lines across the Dimer Rows on the Si(100)-(2 × 1)-H Surface through the Radical Chain Reaction. J. Am. Chem. Soc., 127: 15030-15031, 2005.

9.Hossain M Z, Yamashita Y, Mukai K, Yoshinobu J.: Selective functionalization of the Si(100) surface by switching the adsorption linkage of a bifunctional organic molecule. Chem. Phys. Lett. 388: 27-30, 2004.

10.Hossain M Z, Machida S, Nagao M, Yamashita Y,  Mukai K, Yoshinobu J.: Highly selective surface Lewis acid-base reaction: trimethylamine on Si(100)c(4 × 2). J. Phys. Chem. B 108: 4737-4742, 2004.

11.Hossain M Z, Yamashita Y, Mukai K, Yoshinobu J.: Microscopic observation of precursor-mediated adsorption process of NH3 on Si(100)c(4 × 2) using STM. Phys. Rev. B  68: 235322, 2003.

12.Hossain M Z, Machida S, Yamashita Y,  Mukai K, Yoshinobu J.:Purely site-specific chemisorption and conformation of trimethylamine on Si(100)c(4 × 2). J. Am. Chem. Soc. 125: 9252-9253,  2003.

13.Yamashita Y, Hossain M Z,  Mukai K, Yoshinobu J.:Microscopic adsorption process of CO on Si(100)c(4 × 2) using low temperature scanning tunnelling microscopy. Phys. Rev. B 68: 033314, 2003.

14.Hossain M Z, Yamashita Y, Mukai K, Yoshinobu J.: Model for C-defect on Si(100): The dissociative adsorption of single water molecule on two adjacent dimers. Phys. Rev. B 67: 153307, 2003.

15.Okuyama H, Hossain M Z, Aruga T, Nishijima M.: Adsorbate phonons on Ni(100)(1 × 1)-H. Phys. Rev. B 66: 235411, 2002.

16.Hossain M Z, Miki T, Okuyama H, Aruga T, Tsuno T, Fujimori N, Ando T, Nishijima M.: Chemisorption of O2 and CO on K-modified C(100)(2 × 1) surface. Diamond and Relat. Mater. 10: 2049-2056, 2001.

17.Hossain M Z, Kubo T, Aruga T, Takagi N, Tsuno T, Fujimori N, Nishijima M.: Adsorbed states of K on the diamond(100)(2 × 1) surface. Diamond and Relat. Mater9: 162-169, 2000.

18.Hossain M Z, Kubo T, Takagi N, Tsuno T, Fujimori N, Ando T, Aruga T, Nishijima M.: Diels-Alder reaction on  the clean diamond(100)(2 × 1) surface. Jpn. J. Appl. Phys 38: L1496-L1498, 1999.

19.Hossain M Z, Kubo T, Takagi N, Tsuno T, Fujimori N, Aruga T, Nishijima M.: Surface phonon, electronic structure and chemical reactivity of  diamond(100)(2 × 1) surface. Jpn. J. Appl. Phys.  38: 6659-6666, 1999.

20.Hossain M Z, Kubo T, Takagi N, Tsuno T, Fujimori N, Aruga T, Nishijima M, Chemisorbed states of atomic oxygen and its replacement by atomic H on diamond(100)-(2 × 1) surface. Surf. Sci. 436: 63-71, 1999.

Md. Zakir Hossain

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